Photoreflectance study on the surface states of n-type GaN

被引：8

作者：

Liu, W

Li, MF

Chua, SJ

Akutsu, N

Matsumoto, K

机构：

[1] Natl Univ Singapore, Dept Elect Engn, Ctr Optoelect, Singapore 117548, Singapore

[2] Nippon Sanso Co, Tsukuba Labs, Tsukuba, Ibaraki 30026, Japan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1999年 / 14卷 / 05期

关键词：

D O I：

10.1088/0268-1242/14/5/004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoreflectance spectroscopy was used to study n-type GaN epilayers with doping concentrations ranging from 3 x 10(17) cm(-3) to 5 x 10(18) cm(-3). The relative change of reflectance signal \Delta R/R\ was investigated as a function of doping concentration ND. The value of log(10)(\Delta R/R\) was found to be proportional to log,,,(ND) with a slope of -1.2 +/- 0.2. This result can be explained by a simple model based on an assumption that low-density surface states exist in the surface of GaN. The result may clarify certain issues in the existing Schottky barrier experiments.

引用

页码：399 / 402

页数：4

共 20 条

[1] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].