VLS growth of ITO whiskers prepared by the electron shower method

被引:12
作者
Yumoto, H [1 ]
Onozumi, S [1 ]
Kato, Y [1 ]
Ishihara, M [1 ]
Kishi, K [1 ]
机构
[1] SCI UNIV TOKYO,DEPT APPL PHYS,SHINJUKU KU,TOKYO 162,JAPAN
关键词
D O I
10.1002/crat.2170310205
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Indium tin oxide (ITO) whiskers were gown by VLS (vapour-liquid-solid) mechanism, using the electron shower method. The whiskers were grown above 200 degrees C, and the deposition rate was above 0.6 nm/s. The electron shower controlled the size of the whiskers, and the size was 30 nm in diameter and 600 nm in length. The whiskers grew along the substrate at t < 300 s, but grew in a direction perpendicular to the substrate at t > 300 s. When the ITO whiskers grown along the substrate were used as NO2 gas sensor, the sensitivity was 340, and about 300 times higher than those of the whiskers grown in a direction perpendicular to tile substrate and plate-like ITO crystallites.
引用
收藏
页码:159 / 164
页数:6
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