PROPERTIES AND SURFACE-MORPHOLOGY OF INDIUM TIN OXIDE-FILMS PREPARED BY ELECTRON SHOWER METHOD

被引：13

作者：

YUMOTO, H ^{[1
]}

HATANO, J ^{[1
]}

WATANABE, T ^{[1
]}

FUJIKAWA, K ^{[1
]}

SATO, H ^{[1
]}

机构：

[1] SATO SEIGYO CO LTD,YOKOHAMA,KANAGAWA 244,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 3A期

关键词：

PVD; ITO; INDIUM TIN OXIDE; ELECTRON BEAM; ELECTRON SHOWER; ELECTRON RESISTIVITY; TRANSPARENT ELECTRODE; TRANSPARENT CONDUCTING FILM;

D O I：

10.1143/JJAP.32.1204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Indium tin oxide (ITO) thin films were prepared by electron beam evaporation (EB) with an electron shower. Lawnlike and VLS (vapor-liquid-solid) whiskers of ITO were grown at 300-degrees-C on the surface of the film with and without the electron shower, respectively. The electron resistivity of the ITO film fabricated with the electron shower was 4 X 10(-4) OMEGA. CM, Which was one order of magnitude smaller than that prepared by the EB at the same substrate temperature (300-degrees-C). The electron shower activated the oxidation of In and Sn, but the film was oxygen deficient. The increasing crystallization of the oxygen deficient ITO film was the cause of the decreasing resistivity.

引用

页码：1204 / 1209

页数：6

共 10 条

[1]

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[2]

DAWAR AL, 1984, J MATER SCI, V19, P1, DOI 10.1007/BF02403106

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