InAlAs/AlAsSb type 11 multiple quantum well layers lattice-matched to InP grown by molecular beam epitaxy

被引:7
作者
Kawamura, Y [1 ]
Kurisu, H [1 ]
Yoshimatsu, K [1 ]
Kamada, A [1 ]
Naito, Y [1 ]
Inoue, N [1 ]
机构
[1] UNIV OSAKA PREFECTURE,COLL ENGN,SAKAI,OSAKA 593,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 6B期
关键词
MBE; InAlAs/AlAsSb; type II structure; quantum well; heterointerface;
D O I
10.1143/JJAP.36.L757
中图分类号
O59 [应用物理学];
学科分类号
摘要
In0.52Al0.48As/AlAs0.56Sb0.44 type II multiple quantum well (MQW) layers lattice-matched to InP substrates were grown by molecular beam epitaxy (MBE). High quality InAlAs/AlAsSb MQW layers were obtained by controlling As/Sb beams precisely and optimizing the V/III ratio during growth. Below-gap Light emission at 0.90-0.97 mu m was observed at 77 K, which arises from the recombination between electrons in the InAlAs layers and holes in the AlAsSb layers across the type II heterointerface. The valence band discontinuity Delta E-v is estimated to be 0.28 eV from the InAlAs well width dependence of the emission energy.
引用
收藏
页码:L757 / L760
页数:4
相关论文
共 13 条
[1]   HIGH MOBILITY ALINAS/INP HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
AINA, L ;
MATTINGLY, M ;
BURGESS, M ;
POTTER, R ;
OCONNOR, JM .
APPLIED PHYSICS LETTERS, 1991, 59 (12) :1485-1487
[2]  
ASAI H, 1992, P 4 INT C IND PHOSPH, P351
[3]  
BOHRER J, 1993, APPL PHY LETT, V63, P2995
[4]   STAGGERED-LINEUP HETEROJUNCTIONS AS SOURCES OF TUNABLE BELOW-GAP RADIATION - EXPERIMENTAL-VERIFICATION [J].
CAINE, EJ ;
SUBBANNA, S ;
KROEMER, H ;
MERZ, JL ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1984, 45 (10) :1123-1125
[5]   Optical bistability of In0.52Al0.48As/InP type II multi-quantum well diodes [J].
Kawamura, Y ;
Hakone, Y ;
Iwamura, H ;
Ito, T ;
Inoue, N .
ELECTRONICS LETTERS, 1996, 32 (18) :1729-1730
[6]   TYPE-I/TYPE-II TRANSITION IN INGAALAS/INP MULTIPLE-QUANTUM-WELL STRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].
KAWAMURA, Y ;
KOBAYASHI, H ;
IWAMURA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (1B) :L79-L82
[7]   INP/INALAS RESONANT TUNNELING DIODES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].
KAWAMURA, Y ;
IWAMURA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (12B) :L1733-L1735
[8]  
KAWAMURA Y, 1995, J CRYST GROWTH, V150, P597
[9]   ELECTRIC-FIELD-INDUCED EXCITONS IN AN ALINAS INP TYPE-II SUPERLATTICE [J].
KOBAYASHI, H ;
KAWAMURA, Y ;
MOGI, K ;
IWAMURA, H .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (10) :5916-5920
[10]  
NAKATA Y, 1990, MATER RES SOC SYMP P, V198, P289, DOI 10.1557/PROC-198-289