Optical bistability of In0.52Al0.48As/InP type II multi-quantum well diodes

被引：9

作者：

Kawamura, Y

Hakone, Y

Iwamura, H

Ito, T

Inoue, N

机构：

[1] UNIV OSAKA PREFECTURE, COLL ENGN, SAKAI, OSAKA 593, JAPAN

[2] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECT LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 18期

关键词：

optical bistability; semiconductor junction lasers; semiconductor quantum wells;

D O I：

10.1049/el:19961133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical bistability was observed in the current-light output (I-L) characteristic of an InAlAs/Inp type II multi-quantum well (MQW) diode for the first time. With bistability, light output suddenly increases at 70mA when the current increases; it suddenly decreases al 30mA when the current decreases. We found that the bistability of the I-L characteristic corresponds exactly to the bistability of the current-voltage (I-V) characteristic of the InAlAs/InP MQW diode.

引用

收藏

页码：1729 / 1730

页数：2

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