INGAASP/INALAS TYPE-I TYPE-II MULTIPLE-QUANTUM-WELL STRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：4

作者：

KAWAMURA, Y

IWAMURA, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00747-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In1-xGaxAs1-yPy/In0.52Al0.48As multiple quantum well (MQW) structures have been grown on InP substrates by gas source molecular beam epitaxy and the compositional dependence of the optical properties are studied by photoluminescence and optical absorption measurements. It is found that the type I/type II transition occurs at a P composition of 0.60. From the compositional dependence of the effective bandgap of the InGaAsP/InAlAs MQW structure, the valence band discontinuity (Delta E(v)) of the InP/InAlAs hetero-interface is estimated to be 0.20 eV, which is consistent with the result for the conduction band discontinuity (Delta E(c)) of In1-w-zGawAlzAs/InP MQW structures.

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页码：597 / 601

页数：5

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