Active-matrix OLED on bendable metal foil

被引：49

作者：

Cheon, JH ^{[1
]}

Choi, JH

Hur, JH

Jang, J

Shin, HS

Jeong, JK

Mo, YG

Chung, HK

机构：

[1] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea

[2] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 05期

关键词：

active-matrix organic light-emitting diode (AMOLED); metal foil; metal-induced crystallization with a nitride cap layer (MICC); poly-Si thin-film transistor (TFr); stainless steel;

D O I：

10.1109/TED.2006.871873

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This brief report; a flexible active-matrix organic light-emitting diode display based on a poly-Si thin-film transistor (TFT) backplane. The p-channel poly-Si TFTs on metal foil exhibited a maximum field-effect mobility of 86.1 cm(2)/Vs, threshold voltage of 3.5 V, gate voltage swing of 0.8 V/dec, and the minimum off current of 10(-12) A/mu m at V-ds = -0.1 V. A 4.1-in active-matrix backplane was fabricated with the poly-Si TFT with a conventional pixel circuit consisting of 2 TFTs and one capacitor. The scan driver circuits with PMOS were integrated on the flexible metal foil. The to emission, organic light emitting display having a brightness of 100 cd/m(2).

引用

页码：1273 / 1276

页数：4

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