Transport anisotropy in spontaneously ordered GaInP2 alloys

被引：17

作者：

Chernyak, L

Osinsky, A

Temkin, H

Mintairov, A

Malkina, IG

Zvonkov, BN

Safanov, YN

机构：

[1] TEXAS TECH UNIV,DEPT ELECT ENGN,LUBBOCK,TX 79409

[2] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

[3] RUSSIAN STATE UNIV,INST TECH PHYS,NIZHNII NOVGOROD 603000,RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 18期

关键词：

D O I：

10.1063/1.118864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Large anisotropy in minority carrier diffusion length and specific conductivity is observed in epitaxial layers of GaInP2 alloys with CuPtB-type ordering. Both the diffusion length and specific conductivity are enhanced, by factor of 10, in the [110] direction, parallel to the Line of intersection of the ordered (1-11) and (-111) planes with the (001) growth surface. The reduction in transport length in the [1-10] direction is attributed to carrier scattering at domain boundaries. No transport anisotropy is observed in disordered GaInP2 epitaxial layers. (C) 1997 American Institute of Physics.

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页码：2425 / 2427

页数：3

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