SILICON AND SELENIUM DOPING EFFECTS ON BAND-GAP ENERGY AND SUBLATTICE ORDERING IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：40

作者：

GOMYO, A

HOTTA, H

HINO, I

KAWATA, S

KOBAYASHI, K

SUZUKI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 08期

关键词：

D O I：

10.1143/JJAP.28.L1330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1330 / L1333

页数：4

共 11 条

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[5] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY
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[6] OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS
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[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (25) : 2645 - 2648
[7] NONEXISTENCE OF LONG-RANGE ORDER IN GA0.5IN0.5P EPITAXIAL LAYERS GROWN ON (111)B AND (110) GAAS SUBSTRATES
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[8] LOW-PRESSURE MOVPE GROWTH OF SI-DOPED GA0.5IN0.5P USING SI2H6
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[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 618 - 623
[9] ALGAINP DOUBLE HETEROSTRUCTURE VISIBLE-LIGHT LASER-DIODES WITH A GAINP ACTIVE LAYER GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
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SUZUKI, T
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) : 704 - 711
[10] GROWTH OF HIGH-QUALITY INGAALP EPILAYERS BY MOCVD USING METHYL METALORGANICS AND THEIR APPLICATION TO VISIBLE SEMICONDUCTOR-LASERS
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NAKANISI, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 374 - 379

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