Mobility behavior of n-channel and p-channel MOSFET's with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition

被引：29

作者：

Vogel, EM ^{[1
]}

Hill, WL ^{[1
]}

Misra, V ^{[1
]}

McLarty, PK ^{[1
]}

Wortman, JJ ^{[1
]}

Hauser, JR ^{[1
]}

Morfouli, P ^{[1
]}

Ghibaudo, G ^{[1
]}

Ouisse, T ^{[1
]}

机构：

[1] ENSERG,URA CNRS,LAB PHYS COMPOSANTS SEMICOND,F-38016 GRENOBLE,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/16.491252

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electric field dependence of electron and hole mobility was investigated in n-channel and p-channel metaloxide-semiconductor field-effect transistors with oxynitride gate dielectrics formed using low-pressure rapid thermal chemical vapor deposition with SiH4, N2O and NH3 as the reactive gases, The peak electron mobility was observed to decrease with increasing nitrogen and hydrogen concentration whereas the high-field mobility degradation was improved, The hole mobility was observed to decrease for all electric fields. A self-consistent physical explanation for the observed electron and hole mobility behavior is suggested based on the electrical results, We attribute the observed mobility characteristics mainly to the trapping behavior of these films.

引用

页码：753 / 758

页数：6

共 29 条

[1] TIME-DEPENDENT DIELECTRIC-BREAKDOWN CHARACTERISTICS OF N2O OXIDE UNDER DYNAMIC STRESSING [J].

AHN, J ;

JOSHI, A ;

LO, GQ ;

KWONG, DL .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (10) :513-515

[2] HIGH-FIELD MOBILITY EFFECTS IN REOXIDIZED NITRIDED OXIDE (ONO) TRANSISTORS [J].

CABLE, JS ;

WOO, JCS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (03) :607-613

[3] IMPURITY BARRIER PROPERTIES OF REOXIDIZED NITRIDED OXIDE-FILMS FOR USE WITH P+-DOPED POLYSILICON GATES [J].

CABLE, JS ;

MANN, RA ;

WOO, JCS .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (03) :128-130

[4] CAPTURE AND TUNNEL EMISSION OF ELECTRONS BY DEEP LEVELS IN ULTRATHIN NITRIDED OXIDES ON SILICON [J].

CHANG, ST ;

JOHNSON, NM ;

LYON, SA .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :316-318

[5] ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS [J].

CHENG, YC ;

SULLIVAN, EA .

SURFACE SCIENCE, 1973, 34 (03) :717-731

[6] EFFECT OF COULOMB SCATTERING ON SILICON SURFACE MOBILITY [J].

CHENG, YC ;

SULLIVAN, EA .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :187-192

[7] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY [J].

CHRISTEN.S ;

LUNDSTRO.I ;

SVENSSON, C .

SOLID-STATE ELECTRONICS, 1968, 11 (09) :797-&

[8] IMPACT IONIZATION AND POSITIVE CHARGE FORMATION IN SILICON DIOXIDE FILMS ON SILICON [J].

DIMARIA, DJ ;

ARNOLD, D ;

CARTIER, E .

APPLIED PHYSICS LETTERS, 1992, 60 (17) :2118-2120

[9] HIGH-FIELD RELATED THIN OXIDE WEAROUT AND BREAKDOWN [J].

DUMIN, DJ ;

MOPURI, SK ;

VANCHINATHAN, S ;

SCOTT, RS ;

SUBRAMONIAM, R ;

LEWIS, TG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (04) :760-772

[10]

DUNN GJ, IEEE T NUCL SCI, V36, P1989

← 1 2 3 →