TIME-DEPENDENT DIELECTRIC-BREAKDOWN CHARACTERISTICS OF N2O OXIDE UNDER DYNAMIC STRESSING

被引：21

作者：

AHN, J ^{[1
]}

JOSHI, A ^{[1
]}

LO, GQ ^{[1
]}

KWONG, DL ^{[1
]}

机构：

[1] UNIV TEXAS,DEPT ELECT & COMP ENGN,AUSTIN,TX 78712

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 10期

关键词：

D O I：

10.1109/55.192818

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, TDDB characteristics of MOS capacitors with thin (120 angstrom) N2O gate oxide under dynamic unipolar and bipolar stress have been studied and compared to those with control thermal gate oxide of identical thickness. Results show that N2O oxide has significant improvement in t(BD) (2 x under -V(g) unipolar stress, 20 x under +V(g) unipolar stress, and 10 x under bipolar stress). The improvement of t(BD) in N2O oxide is attributed to the suppressed electron trapping and enhanced hole detrapping due to the nitrogen incorporation at the SiO2/Si interface.

引用

页码：513 / 515

页数：3

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