Growth and characterization of GaN layers on SiC substrates

GaN is a promising wide-band-gap semiconductor for the production of blue and UV emitters. The main problem for the advancement of GaN device technology is the absence of GaN substrates. SiC may be used as a substrate for GaN because of its reasonably low lattice mismatch (similar to 3%) and high electrical conductivity. We report here on the properties of GaN layers grown on SiC by metalorganic chemical vapor deposition (MOCVD). The GaN layer thicknesses ranged from 0.5 to 4 mu m, and the growth rate was similar to 2 mu m h(-1). Surface characteristics, crystal quality, optical, and electrical properties of GaN layers grown on SiC substrates were investigated. The first GaN light emitters formed on SiC substrates were fabricated.