A NEW TECHNIQUE FOR CRYSTALLOGRAPHIC CHARACTERIZATION OF HETEROEPITAXIAL CRYSTAL FILMS

被引：58

作者：

ITOH, N

OKAMOTO, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 05期

关键词：

D O I：

10.1063/1.339930

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1486 / 1493

页数：8

相关论文

共 16 条

[1] GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (100) GAAS SUBSTRATES
ASAI, H
OE, K
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6849 - 6851
[2] ORIENTED GROWTH OF SEMICONDUCTORS .2. HOMOEPITAXY OF GALLIUM ARSENIDE
BOBB, LC
HOLLOWAY, H
MAXWELL, KH
ZIMMERMA.E
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) : 1679 - &
[3] ORIENTED GROWTH OF SEMICONDUCTORS .3. GROWTH OF GALLIUM ARSENIDE ON GERMANIUM
BOBB, LC
HOLLOWAY, H
MAXWELL, KH
ZIMMERMAN, E
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) : 4687 - +
[4] COMPTON AH, 1963, XRAYS THEORY EXPT, P745
[5] EFFECT OF RAPID EARLY GROWTH ON PHYSICAL AND ELECTRICAL PROPERTIES OF HETEROEPITAXIAL SILICON
CULLEN, GW
CORBOY, JF
SMITH, RT
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 274 - 283
[6] CULLEN GW, 1978, HETEROEPITAXIAL SEMI
[7] ORIENTED GROWTH OF SEMICONDUCTORS .4. VACUUM DEPOSITION OF EPITAXIAL INDIUM ANTIMONIDE
HOLLOWAY, H
RICHARDS, JL
BOBB, LC
PERRY, J
ZIMMERMAN, E
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) : 4694 - &
[8] X-RAY STUDY OF ALXGA1-XAS EPITAXIAL LAYERS
ISHIDA, K
MATSUI, J
KAMEJIMA, T
SAKUMA, I
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (01): : 255 - 262
[9] STUDY OF CRACKING MECHANISM IN GAN/ALPHA-AL2O3 STRUCTURE
ITOH, N
RHEE, JC
KAWABATA, T
KOIKE, S
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) : 1828 - 1837
[10] LATTICE MISMATCH STUDY OF LPE-GROWN INGAPAS ON (001)-INP USING X-RAY DOUBLE-CRYSTAL DIFFRACTION
MATSUI, J
ONABE, K
KAMEJIMA, T
HAYASHI, I
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) : 664 - 667