Electron injection assisted phase transition in a nano-Au-VO2 junction

被引：59

作者：

Xu, Gang ^{[1
]}

Huang, C. -M. ^{[1
]}

Tazawa, Masato ^{[2
]}

Jin, Ping ^{[2
]}

Chen, D. -M. ^{[1
]}

Miao, L. ^{[1
]}

机构：

[1] Chinese Acad Sci, Guangzhou Inst Energy Convers, Key Lab Renewable Energy & Gas Hydrate, Guangzhou 510640, Peoples R China

[2] Natl Inst Adv Ind Sci & Technol, Nagoya, Aichi 4638560, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 06期

基金：

国家高技术研究发展计划(863计划);

关键词：

D O I：

10.1063/1.2972106

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The semiconductor-metal transition of vanadium dioxide (VO2) thin films epitaxially grown on C-plane sapphire is studied by depositing Au nanoparticles onto the thermochromic films forming a metal-semiconductor contact, namely, a nano-Au-VO2 junction. It reveals that Au nanoparticles have a marked effect on the reduction in the phase transition temperature of VO2. A process of electron injection in which electrons flow from Au to VO2 due to the lower work function of the metal is believed to be the mechanism. The result may support the Mott-Hubbard phase transition model for VO2. (C) 2008 American Institute of Physics.

引用

页数：3

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