Structural and electrochromic properties of molybdenum doped vanadium pentoxide thin films by sol-gel and hydrothermal synthesis

被引:79
作者
Jin, Aiping [1 ,2 ]
Chen, Wen [1 ,2 ]
Zhu, Quanyao [1 ,2 ]
Yang, Ying [1 ,2 ]
Volkov, V. L. [3 ]
Zakharova, G. S. [3 ]
机构
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
[2] Wuhan Univ Technol, Inst Mat Sci & Engn, Wuhan 430070, Peoples R China
[3] Russian Acad Sci, Inst Solid State chem, Ural Div, Yekaterinbur 620219, Russia
关键词
Electrochromism; Molybdenum-doped vanadium pentoxide; Thin films; Sol-gel; Hydrothermal synthesis; TUNGSTEN-OXIDE; V2O5; FILMS; DEVICES; COATINGS; XPS; WINDOWS;
D O I
10.1016/j.tsf.2008.10.001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Molybdenum-doped vanadium pentoxide (Mo-doped V2O5) thin films with doping levels of 3-10 mol% were prepared by dip-coating technique from a stable Mo-doped V2O5 films had a layered V2O5 matrix structure along c-axis orientation with Mo6+ as substitutes. Values of the inserted and extracted charge density of 21.4 and 21.3 mC.cm(-2) and the transmission variation (Delta T at 640 nm) between anodic (+1.0V) and cathodic (-1.0V) colored states of 41% were observed for the films with 5 mol% Mo6+ doping. Above this dopant concentration, the charge capacity and Delta T decreased. The enhancement of the electrochemical and electrochromic properties of the films is related to changes in the electronic properties of V2O5 films due to the creation of energy levels in the band gap of V2O5 by the Mo doping, accompanied by the reduction of the forbidden-band width and the increase of the conductivity. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:2023 / 2028
页数:6
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