Electron-beam-induced deposition of platinum at low landing energies

Electron-beam-induced deposition of platinum from methylcyclopentadienyl-platinum-trimethyl was performed with a focused electron beam at low landing energies, down to 10 eV. The deposition growth rate is maximal at 140 eV, with the process being over ten times more efficient than at 20 kV. No significant dependence of composition with landing energy was found in the deposits performed at energies between 40 and 1000 eV. This study provides further evidence for the dissociation process being primarily driven by the sub-20-eV secondary electrons.