The study of diffusion and nucleation for COSi2 formation by oxide-mediated cobalt silicidation

被引：14

作者：

Chang, JJ

Liu, CP

Hsieh, TE

Wang, YL ^{[1
]}

机构：

[1] Natl Univ Tainan, Coll Sci & Engn, Tainan, Taiwan

[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[3] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan

来源：

SURFACE & COATINGS TECHNOLOGY | 2006年 / 200卷 / 10期

关键词：

cobalt silicide; diffusion; nucleation; oxide-mediated silicidation;

D O I：

10.1016/j.surfcoat.2005.07.044

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 [材料科学与工程]; 080502 [材料学];

摘要：

The role of cobalt in oxide-mediated silicidation is studied in terms of diffusion and nucleation by varying annealing conditions, oxide thickness and implantation in Si substrate. Electroscopic imaging in transmission electron microscopy shows that SiOx act as a one-way diffusion barrier reducing the Co effective concentration at the cobalt silicide growth interface leading to CoSi2 as the first formation phase during silicidation. X-ray photoelectron spectroscopy analysis shows that unreacted Co coexists with CoSi2 at the interface between the SiOx layer and Si substrate, implying that Co diffusion rate is faster than CoSi, nucleation rate. An Si-implanted substrate can increase the CoSi2 nucleation rate and reduce the Co accumulation. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：3314 / 3318

页数：5

共 16 条

[1]

DIFFUSION OF COBALT AND TITANIUM IN SIO2 [J].