EPITAXY OF COSI2 ON SI (111) AT LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO 400-DEGREES-C)

被引：24

作者：

HADERBACHE, L

WETZEL, P

PIRRI, C

PERUCHETTI, JC

BOLMONT, D

GEWINNER, G

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 15期

关键词：

D O I：

10.1063/1.100456

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1384 / 1386

页数：3

共 18 条

[1] HIGH-TEMPERATURE NUCLEATION AND SILICIDE FORMATION AT THE CO/SI(111)-7X7 INTERFACE - A STRUCTURAL INVESTIGATION
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WEAVER, JH
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[2] DAVITAYA A, 1985, J VAC SCI TECHNOL B, V3, P770
[3] CO/SI(111) INTERFACE FORMATION AT ROOM-TEMPERATURE
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GEWINNER, G
PERUCHETTI, JC
[J]. PHYSICAL REVIEW B, 1987, 36 (12): : 6681 - 6684
[4] ENERGY-BAND STRUCTURE OF COSI2 EPITAXIALLY GROWN ON SI(111)
GEWINNER, G
PIRRI, C
PERUCHETTI, JC
BOLMONT, D
DERRIEN, J
THIRY, P
[J]. PHYSICAL REVIEW B, 1988, 38 (03): : 1879 - 1884
[5] TRANSISTOR ACTION IN SI/COSI2/SI HETEROSTRUCTURES
HENSEL, JC
LEVI, AFJ
TUNG, RT
GIBSON, JM
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 151 - 153
[6] ON THE GROWTH OF COSI2 AND COSI/SI HETEROSTRUCTURES ON SI(111)
HENZ, J
OSPELT, M
VONKANEL, H
[J]. SOLID STATE COMMUNICATIONS, 1987, 63 (06) : 445 - 449
[7] HUNT BD, 1986, MATER RES SOC S P, V56, P151
[8] SURFACE CHEMICAL-SHIFTS AND PHOTOELECTRON DIFFRACTION IN COSI2
LECKEY, R
RILEY, JD
JOHNSON, RL
LEY, L
DITCHEK, B
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (01): : 63 - 69
[9] ROOM-TEMPERATURE CODEPOSITION GROWTH TECHNIQUE FOR PINHOLE REDUCTION IN EPITAXIAL COSI2 ON SI (111)
LIN, TL
FATHAUER, RW
GRUNTHANER, PJ
DANTERROCHES, C
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 804 - 806
[10] SURFACE-STRUCTURE OF EPITAXIAL COSI2 CRYSTALS GROWN ON SI(111)
PIRRI, C
PERUCHETTI, JC
BOLMONT, D
GEWINNER, G
[J]. PHYSICAL REVIEW B, 1986, 33 (06): : 4108 - 4113

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