SURFACE-STRUCTURE OF EPITAXIAL COSI2 CRYSTALS GROWN ON SI(111)

被引：67

作者：

PIRRI, C

PERUCHETTI, JC

BOLMONT, D

GEWINNER, G

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.33.4108

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：4108 / 4113

页数：6

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