OXIDATION BEHAVIOR OF PD-SI COMPOUNDS

被引：31

作者：

CROS, A ^{[1
]}

POLLAK, RA ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

THIN SOLID FILMS | 1983年 / 104卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(83)90565-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：221 / 225

页数：5

共 12 条

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[4] CROS A, 1982, SURF SCI, V116, pL232, DOI 10.1016/0039-6028(82)90354-5
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[J]. SURFACE SCIENCE, 1981, 110 (02) : 471 - 490
[6] CHEMICAL BONDING AND CHARGE REDISTRIBUTION - VALENCE BAND AND CORE LEVEL CORRELATIONS FOR THE NI/SI, PD/SI, AND PT/SI SYSTEMS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 680 - 683
[7] OXYGEN IMPURITY EFFECTS AT METAL-SILICIDE INTERFACES - FORMATION OF SILICON-OXIDE AND SUBOXIDES IN THE NI-SI SYSTEM
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SCOTT, DM
NICOLET, MA
MAYER, JW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 641 - 648
[8] ELECTRONIC STATES AND MICROSTRUCTURE AT THE SILICIDE-SILICON INTERFACE
HO, PS
RUBLOFF, GW
[J]. THIN SOLID FILMS, 1982, 89 (04) : 433 - 446
[9] X-RAY PHOTOELECTRON-SPECTROSCOPY OF THERMALLY GROWN SILICON DIOXIDE FILMS ON SILICON
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PERTOSA, P
DUC, TM
[J]. CHEMICAL PHYSICS LETTERS, 1975, 36 (04) : 441 - 445
[10] LEY L, 1977, 7TH P INT VAC C 3RD, P2031

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