Surface characterization of smooth heteroepitaxial diamond layers on beta-SiC (001)

被引：7

作者：

Mizuochi, Y ^{[1
]}

Nagasawa, H ^{[1
]}

Kawarada, H ^{[1
]}

机构：

[1] HOYA CORP,R&D CTR,AKISHIMA,TOKYO 196,JAPAN

来源：

DIAMOND AND RELATED MATERIALS | 1997年 / 6卷 / 2-4期

关键词：

crystal growth; heteroepitaxy; atomic force microscopy; surface;

D O I：

10.1016/S0925-9635(96)00710-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Surface morphology of continuous heteroepitaxial diamond layers on beta-SiC (001) has been characterized by various methods. From surface normal SEM images, the surface was so smooth that crystal boundaries were not clearly observed, but in AFM and Normarski optical microscope images, shallow gaps supposed to be remnant boundaries and wrinkles on the surfaces were observed. On the other hand, isolated (001) surfaces before coalescence had no wrinkles and were smoother than the surface of continuous heteroepitaxial films. The wrinkles observed only on the continuous heteroepitaxial film are considered to be formed by strain caused by coalescence, and raise the new problem of heteroepitaxy when the degree of orientation is improved. (C) 1997 Elsevier Science S.A.

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页码：277 / 281

页数：5

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