HETEROEPITAXIAL GROWTH OF SMOOTH AND CONTINUOUS DIAMOND THIN FILMS ON SILICON SUBSTRATES VIA HIGH-QUALITY SILICON-CARBIDE BUFFER LAYERS

被引：97

作者：

KAWARADA, H ^{[1
]}

SUESADA, T ^{[1
]}

NAGASAWA, H ^{[1
]}

机构：

[1] HOYA CORP,CTR RES & DEV,TOKYO 196,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 05期

关键词：

D O I：

10.1063/1.114020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Smooth and continuous diamond films have been heteroepitaxially grown on β-type silicon carbide (β-SiC) (001) surfaces. The smooth films can be obtained in the thickness of less than 6 μm which is the smallest in heteroepitaxial diamonds. The epitaxial growth is composed of three steps; (i) Bias enhanced nucleation on β-SiC (001) grown on silicon (001), (ii) 〈001〉 fast growth mode for the selection of epitaxially oriented particles, and (iii) 〈111〉 fast growth mode for the smoothing of (001) surface. High quality silicon carbide (001) surface is effective for oriented diamond nucleation. The winnowing process of oriented particles and the surface adjustment are due to the high surface energy of diamond. © 1995 American Institute of Physics.

引用

页码：583 / 585

页数：3

共 14 条

[1] ATOMIC-FORCE-MICROSCOPIC STUDY OF HETEROEPITAXIAL DIAMOND NUCLEATION ON (100) SILICON [J].