Model of oxidation of SiC microparticles at high temperature

被引:37
作者
Hou, Xinmei [1 ]
Chou, Kuochih [1 ]
机构
[1] Univ Sci & Technol Beijing, Dept Phys Chem, Beijing 100083, Peoples R China
关键词
Ceramic; Modelling studies; Oxidation;
D O I
10.1016/j.corsci.2008.06.006
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The oxidation kinetics of SiC microparticles has been studied from both experimental data and theoretical aspects based on recent research work. The effects of temperature, especially the particle size on the oxidation kinetics are explained not only qualitatively but also quantitatively based on our theory and model. The results show that our new model and the calculated results can reach a good agreement. It may also be seen that the important role of particle size in oxidation of SiC powder, especially in the nano era for SiC material. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2367 / 2371
页数:5
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