Al2O3 nanotubes fabricated by wet etching of ZnO/Al2O3 core/shell nanofibers

被引:120
作者
Hwang, J
Min, BD
Lee, JS
Keem, K
Cho, K
Sung, MY
Lee, MS
Kim, S [1 ]
机构
[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea
[2] Samsung Elect Co Ltd, Semicond R&D Div, Proc Dev Team, Yongin, Kyunggi, South Korea
关键词
D O I
10.1002/adma.200305209
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In nanotube-based electronics, Al2O3 nanotubes will play a very important role. A method is reported that yields nanotubes with controllable, uniform wall thickness. The Figure represents the stage of the synthesis in which ZnO nanowires synthesized on a thick polycrystalline ZnO layer on a Si substrate have been coated with Al2O3 and the ZnO partially etched away. When the etching is complete, Al2O3 nanotubes remain.
引用
收藏
页码:422 / +
页数:5
相关论文
共 14 条
[1]   ZnO/Al2O3 nanolaminates fabricated by atomic layer deposition:: growth and surface roughness measurements [J].
Elam, JW ;
Sechrist, ZA ;
George, SM .
THIN SOLID FILMS, 2002, 414 (01) :43-55
[2]   High-resolution depth profiling in ultrathin Al2O3 films on Si [J].
Gusev, EP ;
Copel, M ;
Cartier, E ;
Baumvol, IJR ;
Krug, C ;
Gribelyuk, MA .
APPLIED PHYSICS LETTERS, 2000, 76 (02) :176-178
[3]   Atomic layer deposition of Al2O3 thin films using trimethylaluminum and isopropyl alcohol [J].
Jeon, WS ;
Yang, S ;
Lee, CS ;
Kang, SW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (06) :C306-C310
[4]   Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition [J].
Jeong, CW ;
Lee, BI ;
Joo, SK .
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2001, 16 (1-2) :59-64
[5]   Substrate dependence on the optical properties of Al2O3 films grown by atomic layer deposition [J].
Kim, Y ;
Lee, SM ;
Park, CS ;
Lee, SI ;
Lee, MY .
APPLIED PHYSICS LETTERS, 1997, 71 (25) :3604-3606
[6]   Structural and optical properties of ZnO nanowires synthesized from ball-milled ZnO powders [J].
Park, K ;
Lee, JS ;
Sung, MY ;
Kim, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (12) :7317-7321
[7]  
Pu L, 2001, ANGEW CHEM INT EDIT, V40, P1490, DOI 10.1002/1521-3773(20010417)40:8<1490::AID-ANIE1490>3.0.CO
[8]  
2-K
[9]   Monitoring of atomic layer deposition by incremental dielectric reflection [J].
Rosental, A ;
Adamson, P ;
Gerst, A ;
Niilisk, A .
APPLIED SURFACE SCIENCE, 1996, 107 :178-183
[10]   Epitaxial growth of TiO2 films in a hydroxyl-free atomic layer deposition process [J].
Schuisky, M ;
Kukli, K ;
Aarik, J ;
Lu, J ;
Hårsta, A .
JOURNAL OF CRYSTAL GROWTH, 2002, 235 (1-4) :293-299