Effect of antimony concentration on the electrical and thermoelectrical properties of (Bi1-xSbx)2Te3 thin films grown by metal organic chemical vapour deposition (MOCVD) technique

被引：21

作者：

Giani, A ^{[1
]}

Boulouz, A ^{[1
]}

Aboulfarah, B ^{[1
]}

Pascal-Delannoy, F ^{[1
]}

Foucaran, A ^{[1
]}

Boyer, A ^{[1
]}

Mzerd, A ^{[1
]}

机构：

[1] Univ Montpellier 2, Ctr Elect & Microoptoelect Montpellier, UMR CNRS 5507, F-34095 Montpellier 05, France

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 204卷 / 1-2期

关键词：

MOCVD; thin films; (BiSb)(2)Te-3; thermoelectrics;

D O I：

10.1016/S0022-0248(99)00159-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The electrical and thermoelectrical performances of p-type (Bi1 - xSbx)(2)Te-3 elaborated by metal organic chemical vapour deposition (MOCVD) in horizontal quartz reactor on pyrex substrate are discussed. The quality of the deposition layers is controlled by X-ray diffraction, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). Hall effect measurements are used to determine resistivity and holes mobility. It is found that the electrical properties of thin films depend strongly on growth parameters and exhibit a polycrystalline structure. The measurement of Seebeck coefficient (S = 235 mu V/K) and the resistivity (rho = 15 mu Omega m) leads us to confirm the significant potential of the MOCVD method to produce a good material promising for thermoelectric application. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：91 / 96

页数：6

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