Two-trap model for carrier lifetime and resistivity behavior in partially annealed GaAs grown at low temperature

被引：41

作者：

Gregory, IS

Tey, CM

Cullis, AG

Evans, MJ

Beere, HE

Farrer, I

机构：

[1] TeraView Ltd, Cambridge CB4 0WS, England

[2] Univ Cambridge, Cavendish Lab, Semicond Phys Grp, Cambridge CB3 0HE, England

[3] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

PHYSICAL REVIEW B | 2006年 / 73卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.73.195201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have developed a semiquantitative model based on Ostwald ripening to explain observed trends in both the carrier trapping lifetime and bulk resistivity when low-temperature-grown gallium arsenide is partially annealed. The effects of both point defects and precipitates are described independently, representing two distinct types of recombination center. The model predicts previously observed and hitherto unexplained anomalous features in the carrier lifetime and resistivity trends as the anneal temperature is increased. The predictions are supported by experimental measurements of the point defect concentration and precipitate parameters, using x-ray diffraction and transmission electron microscopy imaging, respectively.

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页数：8

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