Nitrogen incorporation kinetics in metalorganic molecular beam epitaxy of GaAsN

被引：21

作者：

Jin, C ^{[1
]}

Qiu, Y ^{[1
]}

Nikishin, SA ^{[1
]}

Temkin, H ^{[1
]}

机构：

[1] Texas Tech Univ, Dept Elect Engn, Lubbock, TX 79409 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 23期

关键词：

D O I：

10.1063/1.124138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial layers of GaAsN were grown on GaAs by metalorganic molecular beam epitaxy using dimethylhydrazine, triethylgallium, and conventional arsenic sources. The nitrogen incorporation in GaAsN was studied by varying the arsenic and gallium fluxes, at growth temperatures between 430 and 500 degrees C. The nitrogen incorporation kinetics and growth mechanism have been modeled by assuming formation of an adduct of trimethylgallium and dimethylhydrazine. The model accounts for experimentally observed relationships between growth rates and incorporation of N into GaAsN, fluxes of Ga, As, and N, and the growth temperature. (C) 1999 American Institute of Physics. [S0003-6951(99)03122-8].

引用

页码：3516 / 3518

页数：3

共 17 条

[11] Growth of single phase GaAs1-xNx with high nitrogen concentration by metal-organic molecular beam epitaxy
Qiu, Y
Nikishin, SA
Temkin, H
Faleev, NN
Kudriavtsev, YA
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (24) : 3242 - 3244
[12] Metalorganic molecular beam epitaxy of GaAsN with dimethylhydrazine
Qiu, Y
Jin, C
Francoeur, S
Nikishin, SA
Temkin, H
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (16) : 1999 - 2001
[13] Room-temperature operation of GaInNAs/GaInP double-heterostructure laser diodes grown by metalorganic chemical vapor deposition
Sato, SI
Osawa, Y
Saitoh, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A): : 2671 - 2675
[14] Metalorganic molecular beam epitaxy of GaNAs alloys on (001)GaAs
Uesugi, K
Suemune, I
[J]. JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 490 - 495
[15] Giant and composition-dependent optical bowing coefficient in GaAsN alloys
Wei, SH
Zunger, A
[J]. PHYSICAL REVIEW LETTERS, 1996, 76 (04) : 664 - 667
[16] RED SHIFT OF PHOTOLUMINESCENCE AND ABSORPTION IN DILUTE GAASN ALLOY LAYERS
WEYERS, M
SATO, M
ANDO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (7A): : L853 - L855
[17] GROWTH OF GAASN ALLOYS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION USING PLASMA-CRACKED NH3
WEYERS, M
SATO, M
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (12) : 1396 - 1398

← 1 2 →