Doping dependence of low-frequency noise in polycrystalline SiGe film resistors

Study on low-frequency noise in polycrystalline SiGe material is conducted. We use poly-Si0.7Ge0.3 resistors that were deposited by low-pressure chemical vapor deposition and were doped with different concentrations of boron by ion implantation. The doping dependence of low-frequency noise of poly-SiGe is similar to that of poly-Si. However, the value of alpha for poly-SiGe is one order smaller than that for poly-Si. We found that decreasing boundary scattering at higher doping concentration results in increased mobility, and decreased 1/f noise parameter alpha. (C) 1999 American Institute of Physics. [S0003-6951(99)01230-9].