A MODEL OF 1/F NOISE IN POLYSILICON RESISTORS

被引：24

作者：

JANG, SL

机构：

[1] Department of Electronic Engineering, National Taiwan Institute of Technology, Taipei, 10772, 43 Keelung Road

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 09期

关键词：

D O I：

10.1016/0038-1101(90)90094-U

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new noise model is presented to describe 1 f noise in polysilicon resistors. This model is based on the mobility fluctuations in the depletion regions of grain-boundaries. The new physical mechanisms included are the potential, carrier number and depletion width fluctuations resulting from the mobility fluctuations in the depletion regions. From the experimental data on phosphorus-doped polysilicon resistors in the literature and from the theory, a value of 1.26 × 10-6 for the Hooge parameter and a value of 3.53 × 1012 cm-2 for the surface density of electron traps at the grain boundaries are derived. © 1990.

引用

页码：1155 / 1162

页数：8

共 11 条

[1] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS
BACCARANI, G
RICCO, B
SPADINI, G
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5565 - 5570
[2] 1/F NOISE IN POLYCRYSTALLINE SILICON RESISTORS
DEGRAAFF, HC
HUYBERS, MTM
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2504 - 2507
[3] INTERPRETATION OF 1/F NOISE IN PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON FILMS - HOOGES MODEL OF LATTICE SCATTERING
LOH, E
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 3022 - 3023
[4] A CONDUCTION MODEL FOR SEMICONDUCTOR GRAIN-BOUNDARY SEMICONDUCTOR BARRIERS IN POLYCRYSTALLINE-SILICON FILMS
LU, NC
GERZBERG, L
LU, CY
MEINDL, JD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (02) : 137 - 149
[5] IV CHARACTERISTICS OF POLYSILICON RESISTORS AT HIGH ELECTRIC-FIELD AND THE NON-UNIFORM CONDUCTION MECHANISM
LU, NCC
LU, CY
[J]. SOLID-STATE ELECTRONICS, 1984, 27 (8-9) : 797 - 805
[6] THEORY AND EXPERIMENTS OF 1/F NOISE IN SCHOTTKY-BARRIER DIODES OPERATING IN THE THERMIONIC-EMISSION MODE
LUO, MY
BOSMAN, G
VANDERZIEL, A
HENCH, LL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (08) : 1351 - 1356
[7] LUO MY, 1989, THESIS U FLORIDA GAI
[8] MADURAH MM, 1981, IEEE T ELECTRON DEV, V28, P1171
[9] SIMPAR - A VERSATILE TECHNOLOGY INDEPENDENT PARAMETER EXTRACTION PROGRAM USING A NEW OPTIMIZED FIT-STRATEGY
MAES, W
DEMEYER, KM
DUPAS, LH
[J]. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1986, 5 (02) : 320 - 325
[10] ZERO-BIAS RESISTANCE OF GRAIN-BOUNDARIES IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON
SEAGER, CH
CASTNER, TG
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3879 - 3889

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