THEORY AND EXPERIMENTS OF 1/F NOISE IN SCHOTTKY-BARRIER DIODES OPERATING IN THE THERMIONIC-EMISSION MODE

被引：82

作者：

LUO, MY ^{[1
]}

BOSMAN, G ^{[1
]}

VANDERZIEL, A ^{[1
]}

HENCH, LL ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 08期

关键词：

NOISE; SPURIOUS SIGNAL -- Mathematical Models;

D O I：

10.1109/16.2558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1/f noise model for diodes operating in the thermionic-emission mode under forward-bias conditions has been developed. The model is based on mobility and diffusivity fluctuations occurring in the space-charge region and accounts for the current-limiting role of the metal-semiconductor interface. The bias dependence of the 1/f noise spectral density calculated from this model is in excellent agreement with the results of the authors' experiments but is at variance with the predictions of a model developed by T. G. M. Kleinpenning (1979). From the experimental data, a value of 4.2 × 10-9 for the Hooge parameter is derived. This value is in good agreement with theoretical calculation for electrons in silicon.

引用

页码：1351 / 1356

页数：6

共 14 条

[1]

BISSCHOP J, 1983, THESIS TH EINDHOVEN

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