HBT optoelectronic mixer at microwave frequencies: Modeling and experimental characterization

被引：13

作者：

Lasri, J ^{[1
]}

Betser, Y ^{[1
]}

Sidorov, V ^{[1
]}

Cohen, S ^{[1
]}

Ritter, D ^{[1
]}

Orenstein, M ^{[1
]}

Eisenstein, G ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1999年 / 17卷 / 08期

关键词：

D O I：

10.1109/50.779164

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A heterojunction bipolar transistor (HBT) optoelectronic mixer was studied experimentally and theoretically. A detailed large signal pi-model and a small signal analysis are described. The frequency dependence of down and up conversion has been analyzed and measured. In terms of conversion gain, the advantage of the down conversion process is clearly demonstrated. The values of parameters employed in the mixing process are also discussed for both large and small signal regimes.

引用

页码：1423 / 1428

页数：6

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