A single-stage three-terminal heterojunction bipolar transistor optoelectronic mixer

被引：23

作者：

Betser, Y ^{[1
]}

Ritter, D

Liu, CP

Seeds, AJ

Madjar, A

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

[2] Univ London Univ Coll, Dept Elect & Elect Engn, London WC1E 7JE, England

[3] RAFAEL, IL-32000 Haifa, Israel

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1998年 / 16卷 / 04期

关键词：

D O I：

10.1109/50.664070

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-conversion gain three-terminal heterojunction bipolar transistor (HBT) optoelectronic mixer has been demonstrated. The maximum obtained intrinsic conversion gain was 10.4 dB. The mixing performance was measured as a function of the de bias of the device and local oscillator power level. A SPICE-based large signal model was employed to simulate the device. The main nonlinear effects which contributed to the mixing process were the voltage dependence of the dynamic emitter resistance, and the variation of the current gain in the saturation regime.

引用

页码：605 / 609

页数：5

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