Growth of high-quality GaAs/AlAs Bragg mirrors on patterned InP-based quantum well mesa structures

被引：8

作者：

Gebretsadik, H ^{[1
]}

Kamath, K ^{[1
]}

Linder, KK ^{[1
]}

Zhang, X ^{[1
]}

Bhattacharya, P ^{[1
]}

Caneau, C ^{[1
]}

Bhat, R ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 05期

关键词：

D O I：

10.1063/1.119800

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the regrowth of GaAs/AlAs quarter-wave Bragg reflectors on patterned mesa InP-based quantum well heterostructures that can be fabricated into 1.55 mu m vertical cavity surface emitting lasers. It is seen from transmission electron and scanning electron microscopy that the multiple layer GaAs-based mirrors can be grown on InP-based heterostructure mesas of diameters 10-40 mu m without noticeable propagation of defects into the reflector layers or the quantum well region below. At the same time the photoluminescence from the quantum wells after regrowth indicates that lasers can be fabricated. (C) 1997 American Institute of Physics.

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页码：581 / 583

页数：3

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