Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers

被引：31

作者：

Ha, W ^{[1
]}

Gambin, V

Wistey, M

Bank, S

Yuen, H

Kim, S

Harris, JS

机构：

[1] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA

[2] Agilent Technol, San Jose, CA 95131 USA

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 06期

关键词：

D O I：

10.1049/el:20020207

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The high demand for 1.3-1.55 mum lasers has led to the investigation of GaInNAsSb/GaNAsSb on GaAs. In-plane lasers operating out to 1.49 mum, with threshold current density of 930 A/cm(2) per quantum well and pulsed power up to 70 mW are presented. In addition, photoluminescence out to 1.6 mum from GaInNAsSb quantum wells was observed.

引用

页码：277 / 278

页数：2

共 7 条

[1] 1200nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions [J].

Coldren, CW ;

Larson, MC ;

Spruytte, SG ;

Harris, JS .

ELECTRONICS LETTERS, 2000, 36 (11) :951-952

[2]

HA W, IN PRESS IEEE PHOTON

[3] Tunable long-wavelength vertical-cavity lasers: The engine of next generation optical networks? [J].

Harris, JS .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2000, 6 (06) :1145-1160

[4] Mechanism analysis of improved GaInNAs optical properties through thermal annealing [J].

Kitatani, T ;

Nakahara, K ;

Kondow, M ;

Uomi, K ;

Tanaka, T .

JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) :345-349

[5] GaInNAs: A novel material for long-wavelength semiconductor lasers [J].

Kondow, M ;

Kitatani, T ;

Nakatsuka, S ;

Larson, MC ;

Nakahara, K ;

Yazawa, Y ;

Okai, M ;

Uomi, K .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) :719-730

[6] Room-temperature pulsed operation of 1.3 mu m GaInNAs/GaAs laser diode [J].

Sato, S ;

Osawa, Y ;

Saitoh, T ;

Fujimura, I .

ELECTRONICS LETTERS, 1997, 33 (16) :1386-1387

[7] Spiral growth of InGaN/InGaN quantum wells due to Si doping in the barrier layers (vol 74, pg 1153, 1999) [J].

Uchida, K ;

Yang, T ;

Goto, S ;

Mishima, T ;

Niwa, A ;

Gotoh, J .

APPLIED PHYSICS LETTERS, 1999, 74 (21) :3230-3230

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