Deep-level dominated rectifying contacts for n-type GaN films

被引：26

作者：

Hall, HP ^{[1
]}

Awaah, MA ^{[1
]}

Das, K ^{[1
]}

机构：

[1] Tuskegee Univ, Dept Elect Engn, Tuskegee, AL 36088 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 03期

关键词：

D O I：

10.1002/pssa.200306748

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Rectifying contacts to n-type GaN formed with sputter deposited films of Au, Cu, Cr, Ni and Pt were studied using current-voltage and capacitance-voltage measurements. These rectifying contacts were non-ideal as seen from the non-linearity of the semilogarithmic plots of the forward characteristics. Also, the high ideality factors as determined from the approximately linear region of the plots were much greater than one. The non-ideal behavior cannot be understood in terms of thermionic emission simply by excluding the effects of a series resistance and recombination current. This deviation from thermionic emission has been interpreted to be due to space charge limited current conduction in the presence of deep-level states. A simple analysis of these characteristics has been used to identify the deep-level states in the energy range 0.27 - 0.43 eV below the conduction band minimum and with an approximate concentration between 10(15) and 10(16)/cm(3). (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：522 / 528

页数：7

共 23 条

[11]

MILNES AG, 1973, DEEP IMPURITIES SEMI, P130

[12] First AlGaN/GaN MOSFET with photoanodic gate dielectric [J].

Mistele, D ;

Rotter, T ;

Röver, KS ;

Paprotta, S ;

Seyboth, M ;

Schwegler, V ;

Fedler, F ;

Klausing, H ;

Semchinova, OK ;

Stemmer, J ;

Aderhold, J ;

Graul, J .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 93 (1-3) :107-111

[13] GaN electronics for high power, high temperature applications [J].

Pearton, SJ ;

Ren, F ;

Zhang, AP ;

Dang, G ;

Cao, XA ;

Lee, KP ;

Cho, H ;

Gila, BP ;

Johnson, JW ;

Monier, C ;

Abernathy, CR ;

Han, J ;

Baca, AG ;

Chyi, JI ;

Lee, CM ;

Nee, TE ;

Chuo, CC ;

Chu, SNG .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 82 (1-3) :227-231

[14] GaN: Processing, defects, and devices [J].

Pearton, SJ ;

Zolper, JC ;

Shul, RJ ;

Ren, F .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) :1-78

[15] Ohmic contacts to n-type GaN using Pd/Al metallization [J].

Ping, AT ;

Khan, MA ;

Adesida, I .

JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (05) :819-824

[16] GaN/AlGaN HBT fabrication [J].

Ren, F ;

Han, J ;

Hickman, R ;

Van Hove, JM ;

Chow, PP ;

Klaassen, JJ ;

LaRoche, JR ;

Jung, KB ;

Cho, H ;

Cao, XA ;

Donovan, SM ;

Kopf, RF ;

Wilson, RG ;

Baca, AG ;

Shul, RJ ;

Zhang, L ;

Willison, CG ;

Abernathy, CR ;

Pearton, SJ .

SOLID-STATE ELECTRONICS, 2000, 44 (02) :239-244

[17] Metal contacts to n-type GaN [J].

Schmitz, AC ;

Ping, AT ;

Khan, MA ;

Chen, Q ;

Yang, JW ;

Adesida, I .

JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (04) :255-260

[18] Microstructure, electrical properties, and thermal stability of Al ohmic contacts to n-GaN [J].

Smith, LL ;

Davis, RF ;

Kim, MJ ;

Carpenter, RW ;

Huang, Y .

JOURNAL OF MATERIALS RESEARCH, 1996, 11 (09) :2257-2262

[19]

Smith LL, 1996, MATER RES SOC SYMP P, V395, P861

[20] GaN-based optoelectronic devices on sapphire and Si substrates [J].

Umeno, M ;

Egawa, T ;

Ishikawa, H .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2001, 4 (06) :459-466

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