GaN/AlGaN HBT fabrication

被引：27

作者：

Ren, F

Han, J

Hickman, R

Van Hove, JM

Chow, PP

Klaassen, JJ

LaRoche, JR

Jung, KB

Cho, H

Cao, XA

Donovan, SM

Kopf, RF

Wilson, RG

Baca, AG

Shul, RJ

Zhang, L

Willison, CG

Abernathy, CR

Pearton, SJ

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

[3] SVT Associates Co, Blue Lotus Micro Devices, Eden Prairie, MN 55344 USA

[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[5] Bell Labs, Murray Hill, NJ 07974 USA

来源：

SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0038-1101(99)00229-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Discrete GaN/AlGaN heterojunction bipolar transistors (HBTs) were fabricated on material grown by both metal organic chemical vapor deposition and molecular beam epitaxy. For both types of material, DC current gains of similar to 10 were achieved in 90 mu m emitter diameter devices measured at 300 degrees C. Some of the key processing steps, such as ohmic contact annealing temperature and mesa fabrication by low damage dry etching, are described, together with secondary ion mass spectrometry measurements of the dopant and background impurity profiles. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

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页码：239 / 244

页数：6

相关论文

共 16 条

[1] Megawatt solid-state electronics [J].

Brown, ER .

SOLID-STATE ELECTRONICS, 1998, 42 (12) :2119-2130

[2] Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC [J].

Bulman, GE ;

Doverspike, K ;

Sheppard, ST ;

Weeks, TW ;

Kong, HS ;

Dieringer, HM ;

Edmond, JA ;

Brown, JD ;

Swindell, JT ;

Schetzina, JF .

ELECTRONICS LETTERS, 1997, 33 (18) :1556-1557

[3] AlGaN/GaN quantum well ultraviolet light emitting diodes [J].

Han, J ;

Crawford, MH ;

Shul, RJ ;

Figiel, JJ ;

Banas, M ;

Zhang, L ;

Song, YK ;

Zhou, H ;

Nurmikko, AV .

APPLIED PHYSICS LETTERS, 1998, 73 (12) :1688-1690

[4] The effect of H-2 on morphology evolution during GaN metalorganic chemical vapor deposition [J].

Han, J ;

Ng, TB ;

Biefeld, RM ;

Crawford, MH ;

Follstaedt, DM .

APPLIED PHYSICS LETTERS, 1997, 71 (21) :3114-3116

[5] Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor [J].

Han, J ;

Baca, AG ;

Shul, RJ ;

Willison, CG ;

Zhang, L ;

Ren, F ;

Zhang, AP ;

Dang, GT ;

Donovan, SM ;

Cao, XA ;

Cho, H ;

Jung, KB ;

Abernathy, CR ;

Pearton, SJ ;

Wilson, RG .

APPLIED PHYSICS LETTERS, 1999, 74 (18) :2702-2704

[6] Uniformity and high temperature performance of X-band nitride power hemts fabricated from 2-inch epitaxy [J].

Hickman, R ;

Van Hove, JM ;

Chow, PP ;

Klaassen, JJ ;

Wowchack, AM ;

Polley, CJ .

SOLID-STATE ELECTRONICS, 1998, 42 (12) :2183-2185

[7]

MACK MP, 1949, MRS INTERNET J N S R, V2, P41

[8] AlGaN GaN heterojunction bipolar transistor [J].

McCarthy, LS ;

Kozodoy, P ;

Rodwell, MJW ;

DenBaars, SP ;

Mishra, UK .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (06) :277-279

[9] Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

APPLIED PHYSICS LETTERS, 1997, 70 (05) :616-618

[10]

NAKAMURA S, 1997, IEEE J SEL TOP QUANT, V3, P345