Formation of Si islands from amorphous thin films upon thermal annealing

被引：21

作者：

Wakayama, Y ^{[1
]}

Tagami, T ^{[1
]}

Tanaka, S ^{[1
]}

机构：

[1] Japan Sci & Technol Corp, ERATO, Tanaka Solid Junct Project, Kanazawa Ku, Yokohama, Kanagawa 2360004, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 12期

关键词：

D O I：

10.1063/1.370632

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanism of crystalline Si island formation from an amorphous film was discussed in relation to the free energy of the Si/SiO2 system. Agglomeration of the Si crystallite occurred forming islands, thus preventing a further increase in free energy. Crystal growth proceeded in two steps. At first, the size distribution of Si islands was unimodal but finally became bimodal during the crystallization process. (C) 1999 American Institute of Physics. [S0021-8979(99)03212-0].

引用

页码：8492 / 8494

页数：3

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