A high-performance five-channel NMOSFET using selective epitaxial growth and lateral solid phase epitaxy

被引：4

作者：

Kumar, M ^{[1
]}

Liu, HT ^{[1
]}

Sin, JKO ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect Engn & Elect, Kowloon, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 05期

关键词：

double-gate; gate-all-around; selective epitaxy; solid-phase epitaxy; vertical transistor;

D O I：

10.1109/55.998870

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a novel Five-Channel NMOSFET (FC-NMOS) using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE) is reported. The FC-NMOS is an integration of a conventional bulk NMOS, two vertical NMOS, and a gate-all-around NMOS. The top silicon layer for implementing the gate-all-around structure is obtained by using the LSPE with the SEG pillar as the silicon seed. The FC-NMOS has a 3.6x higher current drive as compared to the conventional bulk NMOS. This makes the FC-NMOS very promising for VLSI/ULSI applications.

引用

页码：261 / 263

页数：3

共 8 条

[1] 3-D ICs: A novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration [J].