Photoluminescence up-conversion in single self-assembled InAs/GaAs quantum dots -: art. no. 207401

被引：88

作者：

Kammerer, C

Cassabois, G

Voisin, C

Delalande, C

Roussignol, P

Gérard, JM

机构：

[1] Ecole Normale Super, Phys Mat Condensee Lab, F-75231 Paris 05, France

[2] CNRS, LPN, F-92225 Bagneux, France

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.87.207401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Microphotoluminescence measurements under ew excitation reveal the existence of a strong photoluminescence up-conversion from single InAs/GaAs self-assembled quantum dots and also from the InAs wetting layer. Excitation spectroscopy of the up-converted photoluminescence signal shows identical features from the wetting layer and the single quantum dots, i.e., a band tail coming from the deep states localized at the rough interfaces of the wetting layer quantum well. This observation of photoluminescence up-conversion demonstrates the influence on the quantum dot properties of the environment, and highlights the limitations of the artificial atom model for a semiconductor quantum dot.

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页码：207401 / 1

页数：4

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