Photoluminescence up-conversion in single self-assembled InAs/GaAs quantum dots -: art. no. 207401

被引:88
作者
Kammerer, C
Cassabois, G
Voisin, C
Delalande, C
Roussignol, P
Gérard, JM
机构
[1] Ecole Normale Super, Phys Mat Condensee Lab, F-75231 Paris 05, France
[2] CNRS, LPN, F-92225 Bagneux, France
关键词
D O I
10.1103/PhysRevLett.87.207401
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Microphotoluminescence measurements under ew excitation reveal the existence of a strong photoluminescence up-conversion from single InAs/GaAs self-assembled quantum dots and also from the InAs wetting layer. Excitation spectroscopy of the up-converted photoluminescence signal shows identical features from the wetting layer and the single quantum dots, i.e., a band tail coming from the deep states localized at the rough interfaces of the wetting layer quantum well. This observation of photoluminescence up-conversion demonstrates the influence on the quantum dot properties of the environment, and highlights the limitations of the artificial atom model for a semiconductor quantum dot.
引用
收藏
页码:207401 / 1
页数:4
相关论文
共 26 条
[1]   Exploitation of optical interconnects in future server architectures [J].
Benner, AF ;
Ignatowski, M ;
Kash, JA ;
Kuchta, DM ;
Ritter, MB .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2005, 49 (4-5) :755-775
[2]   Quantum information processing with semiconductor macroatoms [J].
Biolatti, E ;
Iotti, RC ;
Zanardi, P ;
Rossi, F .
PHYSICAL REVIEW LETTERS, 2000, 85 (26) :5647-5650
[3]  
CASSABOIS G, IN PRESS
[4]   Dynamics of anti-Stokes photoluminescence in type-II AlxGa1-xAs-GaInP2 heterostructures: The important role of long-lived carriers near the interface [J].
Cho, YH ;
Kim, DS ;
Choe, BD ;
Lim, H ;
Lee, JI ;
Kim, D .
PHYSICAL REVIEW B, 1997, 56 (08) :R4375-R4378
[5]   SPECTROSCOPY OF QUANTUM LEVELS IN CHARGE-TUNABLE INGAAS QUANTUM DOTS [J].
DREXLER, H ;
LEONARD, D ;
HANSEN, W ;
KOTTHAUS, JP ;
PETROFF, PM .
PHYSICAL REVIEW LETTERS, 1994, 73 (16) :2252-2255
[6]   Interface-induced conversion of infrared to visible light at semiconductor interfaces [J].
Driessen, FAJM ;
Cheong, HM ;
Mascarenhas, A ;
Deb, SK ;
Hageman, PR ;
Bauhuis, GJ ;
Giling, LJ .
PHYSICAL REVIEW B, 1996, 54 (08) :R5263-R5266
[7]   Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes [J].
Eliseev, PG ;
Li, H ;
Stintz, A ;
Liu, GT ;
Newell, TC ;
Malloy, KJ ;
Lester, LF .
APPLIED PHYSICS LETTERS, 2000, 77 (02) :262-264
[8]   Phonon-assisted capture and intradot Auger relaxation in quantum dots [J].
Ferreira, R ;
Bastard, G .
APPLIED PHYSICS LETTERS, 1999, 74 (19) :2818-2820
[9]   Charged and neutral exciton complexes in individual self-assembled In(Ga)As quantum dots -: art. no. 073307 [J].
Finley, JJ ;
Ashmore, AD ;
Lemaître, A ;
Mowbray, DJ ;
Skolnick, MS ;
Itskevich, IE ;
Maksym, PA ;
Hopkinson, M ;
Krauss, TF .
PHYSICAL REVIEW B, 2001, 63 (07)
[10]   OPTICAL INVESTIGATION OF THE SELF-ORGANIZED GROWTH OF INAS/GAAS QUANTUM BOXES [J].
GERARD, JM ;
GENIN, JB ;
LEFEBVRE, J ;
MOISON, JM ;
LEBOUCHE, N ;
BARTHE, F .
JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :351-356