Fabrication and Optoelectrical Properties of IZO/Cu2O Heterostructure Solar Cells by Thermal Oxidation

被引:13
作者
Chen, Cheng-Chiang [1 ]
Chen, Lung-Chien [1 ]
Lee, Yi-Hsuan [1 ]
机构
[1] Natl Taipei Univ Technol, Dept Electroopt Engn, Taipei 106, Taiwan
关键词
THIN-FILMS; CU2O; DEPOSITION;
D O I
10.1155/2012/129139
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Indium zinc oxide (IZO)/cupper oxide (Cu2O) is a nontoxic nature and an attractive all-oxide candidate for low-cost photovoltaic (PV) applications. The present paper reports on the fabrication of IZO/Cu2O heterostructure solar cells which the Cu2O layers were prepared by oxidation of Cu thin films deposited on glass substrate. The measured parameters of cells were the short-circuit current (I-sc), the open-circuit voltage (V-oc), the maximum output power (P-m), the fill factor (FF), and the efficiency (eta), which had values of 0.11 mA, 0.136 V, 5.05 mu W, 0.338, and 0.56%, respectively, under AM 1.5 illumination.
引用
收藏
页数:5
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