A relationship for temperature dependence of threshold current for 1.3-mu m compressively strained-layer multiple-quantum-well lasers

被引：3

作者：

Huang, R ^{[1
]}

Simmons, JG ^{[1
]}

Jessop, PE ^{[1
]}

Evans, J ^{[1
]}

机构：

[1] NORTEL,OTTAWA,ON K1Y 4H7,CANADA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 07期

关键词：

gain; quantum well; ridge waveguide; semiconductor laser; strain;

D O I：

10.1109/68.593336

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Assuming that the differential gain is a linear function of temperature, a formula is derived to describe the threshold current as a function of temperature. A maximum operating temperature, T-max, which is related to the fundamental physical properties (such as differential gain, free carrier loss and intervalence band absorption) of the lasers appears naturally in the formula, at which lasing ceases. To experimentally investigate the relationship, studies were carried out on 1.3-mu m strained-layer multiple quantum-well (SL-MQW) lasers with variant 0.7% compressively strained wells. The formula shows a good correlation with threshold current versus temperature data over the temperature range 200 K-50 K.

引用

页码：892 / 894

页数：3

共 17 条

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