Magnetic properties of P-type GaMnP grown by molecular-beam epitaxy

被引：41

作者：

Overberg, ME ^{[1
]}

Gila, BP

Abernathy, CR

Pearton, SJ

Theodoropoulou, NA

McCarthy, KT

Arnason, SB

Hebard, AF

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Phys, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 19期

关键词：

D O I：

10.1063/1.1416472

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth by molecular-beam epitaxy of the dilute magnetic alloy GaMnP:C is reported. The GaMnP:C contains 9.4% Mn as determined by Auger electron spectroscopy, and is single phase as determined by x-ray diffraction, reflection high-energy electron diffraction, and transmission electron microscopy. Both magnetization and magnetotransport data are reported. The results show the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis at 10 K, indicating that Mn is incorporating into the GaP:C and forming the ferromagnetic semiconductor GaMnP:C. Temperature-dependent magnetization and anomalous Hall data show that magnetic behavior persists to at least 200 K, which is a very high value for a III-V based dilute magnetic semiconductor. (C) 2001 American Institute of Physics.

引用

页码：3128 / 3130

页数：3

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