K+-ISFET type microsensors fabricated by ion implantation

被引：11

作者：

Baccar, ZM ^{[1
]}

JaffrezicRenault, N ^{[1
]}

Martelet, C ^{[1
]}

Jaffrezic, H ^{[1
]}

Marest, G ^{[1
]}

Plantier, A ^{[1
]}

机构：

[1] UNIV LYON 1,IPNL,GRP TRAITEMENT SURFACES,F-69622 VILLEURBANNE,FRANCE

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1997年 / 48卷 / 01期

关键词：

K+-ISFET; ion implantation; sensitivity; selectivity; electrochemical sensors;

D O I：

10.1016/S0254-0584(97)80077-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The possibility of obtaining K+-ISFET microsensors produced by a mild ion implantation technique is investigated. The selective membrane is obtained by low energy implantation of K+ and Al+ ions directly into the thin silica insulator (100 nm) of the microsensor. The K+-sensitivity, selectivity, drift, reproducibility, and the life time are studied. The sensitivity of the implanted ISEFET equal to 41-44 mV pK(-1) is still stable after a whole year's tests.

引用

页码：56 / 59

页数：4

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