Sodium microsensors based on ISFET/REFET prepared through an ion-implantation process fully compatible with a standard silicon technology

被引:12
作者
Baccar, ZM [1 ]
JaffrezicRenault, N [1 ]
Martelet, C [1 ]
Jaffrezic, H [1 ]
Marest, G [1 ]
Plantier, A [1 ]
机构
[1] UNIV LYON 1,IPNL,GRP TRAITEMENT SURFACES,F-69622 VILLEURBANNE,FRANCE
关键词
Na+-ISFET/REFET; ion implantation; sensitivity; electrochemical sensors;
D O I
10.1016/0925-4005(96)80117-1
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Characteristics of Na-ISFET and REFET microsensors produced by a mild ion-implantation technique are investigated in order to design a selective sodium-ion microsensor operating in a differential mode. By implanting a fluence of 2 X 10(16) ions cm(-2) of Al+ at 10 keV and Na+ at 7 keV into the Na-ISFET and a fluence of 10(14) ions cm(-2) of Al+ and of Na+ at the same energies for the REFET, the potassium interference can be minimized and a signal of 58 mV pNa(-1) in the range 10(-4) to 10(-1) M can be obtained in the differential mode, with a detection limit of about 10(-7) M.
引用
收藏
页码:101 / 105
页数:5
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