CHARACTERIZATION OF ION-IMPLANTED GATE INSULATOR FILMS FOR USE AS ION-SELECTIVE MEMBRANE IN ISFETS

被引：11

作者：

PHAM, MT

机构：

[1] Zentralinstitut für Kernforschung Rossendorf, Dresden O- 8051

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1992年 / 7卷 / 1-3期

关键词：

D O I：

10.1016/0925-4005(92)80367-7

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Silicate membranes of desired mixed ion sensitivity and selectivity are fabricated by ion implantation. The ion sensitivity covers a variable range from a few mV to nearly Nernstian response. The ion selectivity varies up to 100-fold between Na+ and K+ and 10(5)-fold between Na+, K+ and H+.

引用

页码：576 / 579

页数：4

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