THIN INSULATOR FILMS CHEMICALLY SENSIBILIZED BY ION-IMPLANTATION FOR USE IN ISFETS - STUDIES ON THE DRIFT EFFECT IN NAS MEMBRANES

被引：11

作者：

PHAM, MT

HOFFMANN, W

HULLER, J

机构：

[1] Zentralinstitut für Kernforschung Rossendorf, Dresden 0, 8051

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1992年 / 8卷 / 03期

关键词：

D O I：

10.1016/0925-4005(92)85022-O

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Drift effects in sodium aluminosilicate films (NAS) prepared by ion implantation were studied using the EIS condensator structure (electrolyte-insulator-semiconductor). Under d.c. bias a polarization was observed leading to a drift of the flat-band voltage and to non-idealities in the ion-sensing response. Mechanisms are discussed that can account for the observed results, and measuring conditions for stable potentiometric signals with such films were derived.

引用

页码：227 / 230

页数：4

共 5 条

[1] ISFETS WITH ION-SENSITIVE MEMBRANES FABRICATED BY ION-IMPLANTATION [J].