SPACE-CHARGE POLARIZATION IN GLASS FILMS

被引：63

作者：

SNOW, EH

DUMESNIL, ME

机构：

来源：

关键词：

D O I：

10.1063/1.1708747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2123 / &

共 14 条

[1] Gross B., 1964, CHARGE STORAGE SOLID
[2] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
DEAL, BE
SNOW, EH
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +
[3] PHYSICAL LIMITATIONS ON FREQUENCY RESPONSE OF A SEMICONDUCTOR SURFACE INVERSION LAYER
HOFSTEIN, SR
WARFIELD, G
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 321 - +
[4] EFFECT OF TEMPERATURE + BIAS ON GLASS-SILICON INTERFACES
KERR, DR
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 385 - &
[5] Lindner R., 1960, Z PHYS CHEM, V23, P408
[6] MILNES GC, 1962, J PHYS CHEM GLASSES, V3, P157
[7] NICOLLIAN EH, 1965, IEEE T ELECTRON DEVI, VED12, P108
[8] OWEN AE, 1959, J SOC GLASS TECHNOL, V43, P159
[9] PLISKIN WA, 1964, ELECTROCHEM TECHNOL, V2, P196
[10] ION TRANSPORT PHENOMENA IN INSULATING FILMS
SNOW, EH
GROVE, AS
DEAL, BE
SAH, CT
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1664 - &