ION-SENSITIVE MEMBRANES FABRICATED BY THE ION-BEAM TECHNIQUE

被引:25
作者
PHAM, MT
HOFFMANN, W
机构
来源
SENSORS AND ACTUATORS | 1984年 / 5卷 / 03期
关键词
D O I
10.1016/0250-6874(84)80012-8
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
引用
收藏
页码:217 / 228
页数:12
相关论文
共 24 条
[1]   ISFETS USING INORGANIC GATE THIN-FILMS [J].
ABE, H ;
ESASHI, M ;
MATSUO, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (12) :1939-1944
[2]   PROPERTIES OF SILICON IMPLANTED WITH BORON IONS THROUGH THERMAL SILICON DIOXIDE [J].
BAUER, LO ;
MACPHERSON, MR ;
ROBINSON, AT ;
DILL, HG .
SOLID-STATE ELECTRONICS, 1973, 16 (03) :289-+
[5]   FROM CONVENTIONAL MEMBRANE ELECTRODES TO ION-SENSITIVE FIELD-EFFECT TRANSISTORS [J].
BERGVELD, P ;
DEROOIJ, NF .
MEDICAL & BIOLOGICAL ENGINEERING & COMPUTING, 1979, 17 (05) :647-654
[6]   ANNEALING BEHAVIOUR OF PROTON-IRRADIATED MOS CAPACITORS [J].
CARD, HC ;
KAO, KC .
ELECTRONICS LETTERS, 1970, 6 (23) :749-&
[7]  
Carter G., 1976, ION IMPLANTATION SEM
[8]  
CHEUNG PW, 1977, MAR WORKSH THEOR DES
[9]  
EISENMAN G, 1967, GLASS ELECTRODES HYD
[10]  
Esashi M., 1975, J JAPAN SOV APPL P S, V44, P339