Raman Spectra of Epitaxial Graphene on SiC and of Epitaxial Graphene Transferred to SiO2

被引：382

作者：

Lee, Dong Su ^{[1
]}

Riedl, Christian ^{[1
]}

Krauss, Benjamin ^{[1
]}

von Klitzing, Klaus ^{[1
]}

Starke, Ulrich ^{[1
]}

Smet, Jurgen H. ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

NANO LETTERS | 2008年 / 8卷 / 12期

关键词：

D O I：

10.1021/nl802156w

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Raman spectra were measured for mono-, bi-, and trilayer graphene grown on SiC by solid state graphitization, whereby the number of layers was preassigned by angle-resolved ultraviolet photoemission spectroscopy. It was found that the only unambiguous fingerprint in Raman spectroscopy to identify the number of layers for graphene on SiC(0001) is the line width of the 2D (or D*) peak. The Raman spectra of epitaxial graphene show significant differences as compared to micromechanically cleaved graphene obtained from highly oriented pyrolytic graphite crystals. The G peak is found to be blue-shifted. The 2D peak does not exhibit any obvious shoulder structures, but it is much broader and almost resembles a single-peak even for multilayers. Flakes of epitaxial graphene were transferred from SiC onto SiO2 for further Raman studies. A comparison of the Raman data obtained for graphene on SiC with data for epitaxial graphene transferre, d to SiO2 reveals that the G peak blue-shift is clearly due to the SiC substrate. The broadened 2D peak however stems from the graphene structure itself and not from the substrate.

引用

页码：4320 / 4325

页数：6

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