Inductively coupled plasma damage in GaN Schottky diodes

被引：9

作者：

Cao, XA ^{[1
]}

Zhang, AP

Dang, GT

Cho, H

Ren, F

Pearton, SJ

Shul, RJ

Zhang, L

Hickman, R

Van Hove, JM

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

[4] SVT Associates, Eden Prairie, MN 55344 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 04期

关键词：

D O I：

10.1116/1.590785

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of H-2 or N-2 plasma exposure on the current-voltage characteristics of GaN Schottky diodes were examined as a function of source power and rf chuck power. Under all conditions there was a strong reduction in diode reverse breakdown voltage and an increase in forward and reverse currents, The results are consistent with creation of a thin (less than or equal to 600 Angstrom) n-type conducting surface region after ion bombardment of the GaN surface. Much of the degradation in diode quality can be recovered by annealing in N-2 at 750 degrees C. (C) 1999 American Vacuum Society. [S0734-211X(99)06804-3].

引用

页码：1540 / 1544

页数：5

共 24 条

[1] AlGaN/GaN HEMTs grown on SiC substrates [J].

Binari, SC ;

Redwing, JM ;

Kelner, G ;

Kruppa, W .

ELECTRONICS LETTERS, 1997, 33 (03) :242-243

[2] Electrical and optical changes in the near surface of reactively ion etched n-GaN [J].

Chen, JY ;

Pan, CJ ;

Chi, GC .

SOLID-STATE ELECTRONICS, 1999, 43 (03) :649-652

[3] Microwave performance of 0.25 mu m doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures [J].

Chen, Q ;

Gaska, R ;

Khan, MA ;

Shur, MS ;

Ping, A ;

Adesida, I ;

Burm, J ;

Schaff, WJ ;

Eastman, LF .

ELECTRONICS LETTERS, 1997, 33 (07) :637-639

[4]

CHO H, 1999, J ELECT MAT, V28, P288

[5] Very low resistance multilayer ohmic contact to n-GaN [J].

Fan, ZF ;

Mohammad, SN ;

Kim, W ;

Aktas, O ;

Botchkarev, AE ;

Morkoc, H .

APPLIED PHYSICS LETTERS, 1996, 68 (12) :1672-1674

[6] Comparison of high field electron transport in GaN and GaAs [J].

Foutz, BE ;

Eastman, LF ;

Bhapkar, UV ;

Shur, MS .

APPLIED PHYSICS LETTERS, 1997, 70 (21) :2849-2851

[7] Highly anisotropic, ultra-smooth patterning of GaN/SiC by low energy electron enhanced etching in DC plasma [J].

Gillis, HP ;

Choutov, DA ;

Martin, KP ;

Bremser, MD ;

Davis, RF .

JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) :301-305

[8] InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained-layer superlattices [J].

Nakamura, S .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (03) :483-489

[9] ELECTRICAL AND STRUCTURAL-CHANGES IN THE NEAR-SURFACE OF REACTIVELY ION ETCHED INP [J].

PEARTON, SJ ;

CHAKRABARTI, UK ;

BAIOCCHI, FA .

APPLIED PHYSICS LETTERS, 1989, 55 (16) :1633-1635

[10] LOW-BIAS ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING OF GAN, ALN, AND INN [J].

PEARTON, SJ ;

ABERNATHY, CR ;

REN, F .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2294-2296

← 1 2 3 →